Chinese researchers have developed super-fast non volatile flash memory
Graphene channel enables 400 picosecond write speed and persistent storage
“PoX” device targets AI bottlenecks with low power, high speed performance
A research team in China has developed what claims is the fastest reported non-volatile semiconductor memory device to date, with a write speed of one bit every 400 picoseconds.
Chinese research team claims world’s fastest non-volatile memory with 400ps write speed, but gives it a PoXy name comes via ChinaTechNews.com.
