
Chinese researchers have developed super-fast non volatile flash memory
Graphene channel enables 400 picosecond write speed and persistent storage
“PoX” device targets AI bottlenecks with low power, high speed performance
A research team in China has developed what claims is the fastest reported non-volatile semiconductor memory device to date, with a write speed of one bit every 400 picoseconds.
Chinese research team claims world’s fastest non-volatile memory with 400ps write speed, but gives it a PoXy name comes via ChinaTechNews.com.

A senior US Democrat has hit out at Donald Trump’s attempt to reset relations with Russia following revelations that the president’s administration is retreating from the fight against Russian cyber threats, calling the reported move “a critical strategic mistake”.
In a statement on Sunday making reference to the Russian leader, New York’s Chuck Schumer – the US Senate’s Democratic minority leader – said Trump was “so desperate to earn the affection of a thug like Vladimir Putin he appears to be giving him a free pass as Russia continues to launch cyber operations and ransomware attacks against critical American infrastructure, threatening our economic and national security”.
Schumer says cyber operations pause against Russia gives Putin ‘free pass’ comes via ChinaTechNews.com.